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专利名称：Power MOSFET semiconductor发明人：Oliver Haeberlen,Joachim Krumrey,Franz
Hirler,Walter Rieger
申请号：US14935877申请日：20151109公开号：US09793391B2公开日：20171017
专利附图：
摘要：A semiconductor device includes a source metallization, a source region of afirst conductivity type in contact with the source metallization, a body region of a secondconductivity type which is adjacent to the source region. The semiconductor device
further includes a first field-effect structure including a first insulated gate electrode anda second field-effect structure including a second insulated gate electrode which iselectrically connected to the source metallization. The capacitance per unit area betweenthe second insulated gate electrode and the body region is larger than the capacitanceper unit area between the first insulated gate electrode and the body region.
申请人：Infineon Technologies Austria AG
地址：Villach AT
国籍：AT
代理机构：Dicke, Billig & Czaja, PLLC
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