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专利名称：Power MOSFET device
发明人：Yusuke Kawaguchi,Norio Yasuhara,Syotaro
Ono,Shinichi Hodama,Akio Nakagawa
申请号：US10055947申请日：20020128公开号：US06720618B2公开日：20040413
专利附图：
摘要：A power MOSFET device comprising a low resistance substrate of the firstconductivity type, a high resistance epitaxial layer of the first conductivity type formed onthe low resistance substrate, a base layer of the second conductivity type formed in a
surface region of the high resistance epitaxial layer, a source region of the firstconductivity type formed in a surface region of the base layer, a gate insulating filmformed on the surface of the base layer so as to contact the source region, a gateelectrode formed on the gate insulating film, and an LDD layer of the first conductivitytype formed on the surface of the high resistance epitaxial layer oppositely relative tothe source region and the gate electrode, wherein the LDD layer and the low resistancesubstrate are connected to each other by the high resistance epitaxial layer.
申请人：KABUSHIKI KAISHA TOSHIBA
代理机构：Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
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