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专利名称：SYSTEMS AND METHODS FOR ANNEALING
SEMICONDUCTOR STRUCTURES
发明人：CHUN-HSIUNG TSAI,ZI-WEI FANG,CHAO-HSIUNG WANG
申请号：US15234076申请日：20160811
公开号：US20160351414A1公开日：20161201
专利附图：
摘要：Systems and methods are provided for annealing a semiconductor structure. Inone embodiment, the method includes providing an energy-converting structure
proximate a semiconductor structure, the energy-converting structure comprising amaterial having a loss tangent larger than that of the semiconductor structure; providinga heat reflecting structure between the semiconductor structure and the energy-converting structure; and providing microwave radiation to the energy-convertingstructure and the semiconductor structure. The semiconductor structure may include atleast one material selected from the group consisting of boron-doped silicongermanium, silicon phosphide, titanium, nickel, silicon nitride, silicon dioxide, siliconcarbide, n-type doped silicon, and aluminum capped silicon carbide. The heat reflectingstructure may include a material substantially transparent to microwave radiation andhaving substantial reflectivity with respect to infrared radiation.
申请人：Taiwan Semiconductor Manufacturing Company Limited
地址：Hsinchu TW
国籍：TW
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