专利内容由知识产权出版社提供
专利名称：Material and method for manufacturing
semiconductor on insulator substrates anddevices
发明人：Charles Partee,Scott Joray申请号：US10413127申请日：20030414公开号：US06720620B1公开日：20040413
专利附图：
摘要：A semiconductor device is formed from a semiconductor on insulator substrate,with the insulator or dielectric layer being formed from a polymer precursor to ceramic.
The polymer precursor to ceramic may be SiC, diamond, or diamond-like carbon. Theresulting device has improved thermal properties, smoothness, dielectric properties,ease of processing, and performance. A method of making the semiconductor device isalso disclosed.
申请人：CENYMER CORPORATION
代理机构：Eckert Seamans Cherin & Mellott, LLC
代理人：William F. Lang, IV
更多信息请下载全文后查看
