专利内容由知识产权出版社提供
专利名称：Method for forming an electronic device发明人：Marius K. Orlowski,Brian J. Goolsby申请号：US11152931申请日：20050615
公开号：US20060286736A1公开日：20061221
专利附图：
摘要：An electronic device is formed by forming a first and second layer overlying aplurality of transistor locations. An etch is performed to remove portions of the first andsecond layers to expose a portion of the plurality of transistor locations, while otherportions of the first and second layer remain to protect other transistor locations.
Subsequently, source/drain locations of the exposed transistor locations are etchedalong with the remaining portion of the second layer. The etch is substantially terminatedby removing the portion of the second layer using an end-point detection techniqueinvolving the first layer. Subsequently an epitaxial layer is formed in the source/drainrecesses to provide stress on a channel region of the transistor locations.
申请人：Marius K. Orlowski,Brian J. Goolsby
地址：Austin TX US,Austin TX US
国籍：US,US
更多信息请下载全文后查看
