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专利名称：Infra-red light-emitting device and method
for preparing the same
发明人：Tsun Neng Yang,Shan Ming Lan申请号：US10925437申请日：20040825公开号：US07163902B2公开日：20070116
专利附图：
摘要：The present infra-red light-emitting device includes a substrate with a firstwindow layer, a silicon dioxide layer positioned on the first window layer, silicon
nanocrystals distributed in the silicon dioxide layer, a second window layer, a transparent
conductive layer and a first ohmic contact electrode positioned in sequence on the silicondioxide layer, and a second ohmic contact electrode positioned on the bottom surface ofthe substrate. The present method forms a sub-stoichiometric silica (SiO) layer on asubstrate, wherein the numerical ratio (x) of oxygen atoms to silicon atoms is smallerthan 2. A thermal treating process is then performed in a nitrogen or argon atmosphereto transform the SiOlayer into a silicon dioxide layer with a plurality of silicon
nanocrystals distributed therein. The thickness of the silicon dioxide layer is between 1and 10,000 nanometers, and the diameter of the silicon nanocrystal is between 4 and 8nanometers.
申请人：Tsun Neng Yang,Shan Ming Lan
地址：Taipei TW,Dasi Township, Taoyuan County TW
国籍：TW,TW
代理机构：Egbert Law Offices
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