2SA1200
TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process)
2SA1200
High Voltage Switching Applications
• High voltage: VCEO = −150 V
• High transition frequency: fT = 120 MHz (typ.) • Small flat package
• PC = 1 to 2 W (mounted on a ceramic substrate) • Complementary to 2SC2880
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current
VCBO VCEO VEBO IC IB PC
Collector power dissipation
PC (Note 1)
Junction temperature Storage temperature range
Tj Tstg
−150 V −150 V −5 V −50 mA −10 mA 500 800
mW
PW-MINI JEDEC
―
JEITA SC-62 150 °C −55 to 150
2
TOSHIBA 2-5K1A Weight: 0.05 g (typ.)
°C
Note 1: 2SA1200 mounted on a ceramic substrate (250 mm × 0.8 t)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
12006-11-09
2SA1200 Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current Emitter cut-off current DC current gain
Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance
ICBO IEBO hFE (Note 3)VCE (sat) VBE fT Cob
VCB = −150 V, IE = 0 VEB = −5 V, IC = 0 VCE = −5 V, IC = −10 mA IC = −10 mA, IB = −1 mA VCE = −5 V, IC = −30 mA VCE = −30 V, IC = −10 mA VCB = −10 V, IE = 0, f = 1 MHz
― ― 70 ― ― ― ―
― ― ― ― ― 120
−0.1 µA −0.1 µA 240 −0.8 V −0.9
V
― MHz4.0 5.0 pF
Note 3: hFE classification O: 70 to 140, Y: 120 to 240
Marking
Part No. (or abbreviation code)B Lot No. Characteristics indicatorA line indicates
lead (Pb)-free package or lead (Pb)-free finish.
22006-11-09
2SA1200
IC – VCE
−50 −2 mA −1 mA −40 −500 µA −300 µA −30 −200 µA −20 IB = −100 µA −10 10−0.5
0 −2
−4
−6
−8
−10
−12
−1
−3
−10
−30
−100
Common emitterTa = 25°C 500300Common emitter Ta = 25°C VCE = −10 V 1005030−5 −2 hFE – IC
Collector current IC (mA) DC current gain hFE 0 0
Collector current IC (mA)
Collector-emitter voltage VCE (V)
hFE – IC
500 VCE = −5 V −5Common emitter Ta = 100°C 25 100 50 30 −25 300 −3Common emitter Ta = 25°C VCE (sat) – IC
Collector-emitter saturation voltage VCE (sat) (V) DC current gain hFE −1−0.5−0.3IC/IB = 2010 5−0.1−0.05−0.03−1
−3
−10
−30
−100
−300
10 −0.5 −1 −3 −10 −30 −100Collector current IC (mA)
Collector current IC (mA)
VCE (sat) – IC
−5 Common emitter IC – VBE
−50Common emitterVCE = −5 V Collector current IC (mA) Collector-emitter saturation voltage VCE (sat) (V) −3 IC/IB = 10 −40−1 −0.5 −0.3 Ta = 100°C −0.1 −0.05 −0.03 −1
25 −25 −3
−10
−30
−100
−300
−30 −20Ta = 100°C−1025 −25 00
−0.2−0.4−0.6−0.8 −1.0 −1.2
Collector current IC (mA) Base-emitter voltage VBE (V)
32006-11-09
2SA1200
Safe Operating Area
−200 PC – Ta
Collector power dissipation PC (mW) IC max (pulse)* IC max (continuous) 500 ms* 100 ms* 1200(1) Mounted on a ceramic 1000(1)substrate (250 mm × 0.8 t) (2) No heat sink 8002−100 −50 −30 Collector current IC (mA) DC operationTa = 25°C −10 −5 *: Single nonrepetitive pulse Ta = 25°C −3 Curves must be derated linearly with increase in temperature. VCEO max Tested without a substrate. −1 −1 −3 −10 −30 −100 −300600 (2)40020000
20406080100 120 140 160
Collector-emitter voltage VCE (V)
Ambient temperature Ta (°C)
42006-11-09
2SA1200
RESTRICTIONS ON PRODUCT USE
• The information contained herein is subject to change without notice.
030619EAA
• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations.
52006-11-09
